Indium Arsenide
| Use attributes for filter ! | |
| Density | 5. 67 g/cm³ |
|---|---|
| Formula | InAs |
| Molar mass | 189. 74 g/mol |
| Band gap | 0. 354 eV (300 K) |
| Lattice constant | a = 6. 0583 Å |
| Crystal structure | Zinc Blende |
| Date of Reg. | |
| Date of Upd. | |
| ID | 1078094 |
About Indium Arsenide
Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3. 8 µm.
