Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe photograph

Properties Of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe

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Originally published February 21, 2001
Editors Sergey L. Rumyantsev
Michael Shur
M. E. Levinshteĭn
Date of Reg.
Date of Upd.
ID2249656
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About Properties Of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe


Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. . . .

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